Oxygen-induced bi-modal failure phenomenon in SiOx-based resistive switching memory

Advanced Physical Modeling of SiOx Resistive Random Access Memories

We apply a three-dimensional (3D) physical simulator, coupling self-consistently stochastic kinetic Monte Carlo descriptions of ion and electron transport, to investigate switching in silicon-rich silica (SiOx) redox-based resistive random-access memory (RRAM) devices. We explain the intrinsic nature of resistance switching of the SiOx layer, and demonstrate the impact of self-heating effects a...

Investigation of edge- and bulk-related resistive switching behaviors and backward-scan effects in SiOx-based resistive switching memory

and backward-scan effects in SiOx-based resistive switching memory Yao-Feng Chang, Li Ji, Yanzhen Wang, Pai-Yu Chen, Fei Zhou, Fei Xue, Burt Fowler, Edward T. Yu, and Jack C. Lee Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78758, USA PrivaTran, LLC, 1250 Capital of Texas Highway South, Bldg 3, Ste 400, Aus...

Physical electro-thermal model of resistive switching in bi-layered resistance-change memory

Tantalum-oxide-based bi-layered resistance-change memories (RRAMs) have recently improved greatly with regard to their memory performances. The formation and rupture of conductive filaments is generally known to be the mechanism that underlies resistive switching. The nature of the filament has been studied intensively and several phenomenological models have consistently predicted the resistan...

Light-activated resistance switching in SiOx RRAM devices

In Situ Transmission Electron Microscopy of Resistive Switching in Thin Silicon Oxide Layers

Silicon oxide-based resistive switching devices show great potential for applications in nonvolatile random access memories. We expose a device to voltages above hard breakdown and show that hard oxide breakdown results in mixing of the SiOx layer and the TiN lower contact layers. We switch a similar device at sub-breakdown fields in situ in the transmission electron microscope (TEM) using a mo...